HIGH–RESOLUTION X–RAY DIFFRACTOMETRY OF PROTON IRRADIATED SILICON

Low-temperature positron-lifetime studies of proton-irradiated silicon.

Measurement of Silicon Crystals Irradiated

30 Si(n,ƒÁ)31Si2.62h +31P+ƒÀ(1) Irradiated silicon crystals are heavily damaged and electrical resistivity changes drastically. The lattice damage can be removed by an appropriate annealing. The change in resistivity of the silicon crystals is quite complex. It depends on both impurity atoms contained originally in silicon and atoms produced by nuclear reactions. This note describes the determi...

Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC

We report T2 spin coherence times for electronic states localized in Si vacancies in 4H -SiC. Our spin coherence study included two SiC samples that were irradiated with 2 MeV protons at different fluences (1013 and 1014 cm−2) in order to create samples with unique defect concentrations. Using optically detected magnetic resonance and spin echo, the coherence times for each sample were measured...

Charge Transport in Non-Irradiated and Irradiated Silicon Diodes

A model describing the transport of charge carriers generated in silicon detectors (standard planar float zone and MESA diodes) by ionizing particles is presented. The current pulse response induced by and particles in non-irradiated detectors and detectors irradiated up to fluences 3 10 particles/cm is reproduced through this model: i) by adding a small n-type region 15 m deep on the p side fo...

Carbon related defects in irradiated silicon revisited

Electronic structure calculations employing hybrid functionals are used to gain insight into the interaction of carbon (C) atoms, oxygen (O) interstitials, and self-interstitials in silicon (Si). We calculate the formation energies of the C related defects Ci(SiI), CiOi, CiCs, and CiOi(SiI) with respect to the Fermi energy for all possible charge states. The Ci(SiI)(2+) state dominates in almos...